| Part number | IRHN8150 |
|---|---|
| Download | IRHN8150 Datasheet (PDF) |
| File Size | 1.56 MB |
| Manufacturer | International Rectifier |
| Description | RADIATION HARDENED POWER MOSFET |
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| Part Number | Description |
|---|---|
| IRHN8230 | N-Channel Transistor |
| IRHN8450 | (IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
