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IRHN8150 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHN8150, a member of the IRHN3150 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

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Datasheet Details

Part number IRHN8150
Manufacturer International Rectifier
File Size 1.56 MB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHN8150 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 90720C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number IRHN7150 IRHN3150 IRHN4150 IRHN8150 Radiation Level RDS(on) 100K Rads (Si) 0.065Ω 300K Rads (Si) 0.065Ω 600K Rads (Si) 0.065Ω 1000K Rads (Si) 0.065Ω ID 34A 34A 34A 34A IRHN7150 JANSR2N7268U 100V, N-CHANNEL REF: MIL-PRF-19500/603 ® ™ RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7268U JANSF2N7268U JANSG2N7268U JANSH2N7268U SMD-1 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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