Datasheet4U Logo Datasheet4U.com

IRHN7C50SE - N-Channel Transistor

Download the IRHN7C50SE datasheet PDF. This datasheet also covers the IRHN2C50SE variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Drive Requirements s Ease of Paralleling s Hermetically Sealed s Surface Mount s Light-Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHN2C50SE_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRH-12-12.5-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-24-6.3-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH-5-30-T110 Encapsulated 150-Watt Isolated DC-DC Converter muRata
IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
IRH310 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHN7130 Radiation Hardened Power MOSFET
IRHN7150 Radiation Hardened Power MOSFET
IRHN7230 N-Channel Transistor
IRHN7250 Radiation Hardened Power MOSFET
IRHN7250SE Radiation Hardened Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.