n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Cer.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

IRHMS57160

IRHMS57163SE

IRHMS57260SE

IRHMS57264SE

IRHMS57Z60

IRHMS593064

IRHMS593160

IRHMS593260

IRHMS597064

IRHMS597160

IRHMS597260

IRHMS597Z60

IRHMS63164

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