IRHMK593160 Datasheet | International Rectifier

Features : n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ V GS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pack. Mounting Surface Temp. Weight - Current is limited by package For footnotes refer to the last page -45- -30 -180 208 1.67 ±20 480 -45 20.8 -6.0 -55 to 150 300 (for 5s) 3.7 (Typical) Pre-Irradiation Units A W/°C V m J A m J V/ns o C g .irf. 12/24/04 IRHMK597160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -100 Typ Max Units - -0.13 - - - - - - - - - - - - - - 6.8 - - 0.05 -4.0 - -10 -25 -100 100 170 65 30 35 140 70 45 - V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0m A Reference to 25°C, ID = -1.0m A VGS = -12V, ID = -30A à VDS = VGS, ID = -1.0m A VDS > -15V, IDS = -30A à VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -50V VDD = -50V, ID = -45A VGS =-12V, RG = 1.2Ω ∆BVDSS / ∆T J Temperature Coefficient of Breakdown - Voltage RDS(on) Static Drain-to-Source...