IRHMB57064 Datasheet | International Rectifier

.. PD-96972 RADIATION HARDENED IRHMB57064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMB57064 100K Rads (Si) IRHMB53064 300K Rads (Si) IRHMB54064 600K Rads (Si) IRHMB58064 1000K Rads (Si) RDS(on) 0.006Ω 0.006Ω 0.006Ω 0.006 Ω ID 45A- 45A- 45A- 45A- Tabless Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (Me V/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features : n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light...