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IRHMB57064 - RADIATION HARDENED POWER MOSFET

Download the IRHMB57064 datasheet PDF (IRHMB53064 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for radiation hardened power mosfet.

Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHMB53064_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com PD-96972 RADIATION HARDENED IRHMB57064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY  ™ Product Summary Part Number Radiation Level IRHMB57064 100K Rads (Si) IRHMB53064 300K Rads (Si) IRHMB54064 600K Rads (Si) IRHMB58064 1000K Rads (Si) RDS(on) 0.006Ω 0.006Ω 0.006Ω 0.006 Ω ID 45A* 45A* 45A* 45A* Tabless Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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