IRHM7230 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. ® IRHM7230 IRHM8230 N CHANNEL MEGA HARD RAD Product Summary Part Number IRHM7230 IRHM8230 BVDSS 200V 200V RDS(on) 0.40Ω 0.40Ω ID 9.0A 9.0A Features : n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings  Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ‚ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy - Avalanche Current ‚ Repetitive Avalanche Energy‚ Peak Diode Recovery dv/dt - Operating Junction Storage Temperature Range Lead Temperature Weight 9.0 6.0 36 75 0.60 ±20 330 9.0 7.5 5.0 -55 to 150 Pre-Irradiation IRHM7230, IRHM8230 Units A W/°C V m J A m J V/ns o C g 300 (0.063 in. (1.6mm) from case for 10s) 9.3 (typical) .irf. 10/14/98 IRHM7230, IRHM8230 .. Devices Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - - 2.0 3.0 - - - - - -...