IRHLNM73110
Features
: n n n n n n n n n n
5V CMOS and TTL patible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = 4.5V,TC = 25°C ID @VGS = 4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 6.5 4.1 26 23.2 0.18 ±10 21 6.5 2.32 4.3 -55 to 150 300 (for 5s) 0.25 (Typical)
Pre-Irradiation
Units
W/°C
V m J A m J V/ns °C g
.irf.
02/21/12
Free Datasheet http://..
IRHLNM77110, 2N7609U8
Pre-Irradiation
Electrical Characteristics @ Tj =...
