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IRHF93130 - P-CHANNEL TRANSISTOR

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Aval.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHF93230 RADIATION HARDENED POWER MOSFET
IRHF9130 P-Channel Power MOSFET
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IRHF3110 RADIATION HARDENED POWER MOSFET
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www.DataSheet4U.com PD - 90882F RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF9130 100K Rads (Si) IRHF93130 300K Rads (Si) RDS(on) 0.30Ω 0.30Ω ID -6.5A -6.5A IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7389 JANSF2N7389 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).