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IRHF9230 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Aval.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHF9130 P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 91312E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF9230 100K Rads (Si) IRHF93230 300K Rads (Si) RDS(on) 0.80Ω 0.80Ω ID -4.0A -4.0A IRHF9230 JANSR2N7390 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7390 JANSF2N7390 International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).