Datasheet Details
| Part number | IRHF9130 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.13 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
 IRHF9130 Datasheet
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General Description
IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This technology has long history of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
Key Features
- Single Event Effect (SEE) Hardened.
- Low RDS(on).
- Low Total Gate Charge.
- Proton Tolerant.
- Simple Drive Requirements.
- Hermetically Sealed.
- Ceramic Package.
- Light Weight.
- ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5 ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1 IDM @ TC = 25°C Pulsed Drain Current .