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IRHF7330SE Datasheet RADIATION HARDENED POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

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Overview

www.DataSheet4U.com PD-91864B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-205AF) Product Summary Part Number IRHF7330SE Radiation Level 100K Rads (Si) IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY ™ ® RDS(on) ID QPL Part Number 1.39Ω 2.9A JANSR2N7463T2 TO-205AF International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁.

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