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IRGSL4B60KD1PbF Datasheet, International Rectifier

IRGSL4B60KD1PbF transistor equivalent, insulated gate bipolar transistor.

IRGSL4B60KD1PbF Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 434.12KB)

IRGSL4B60KD1PbF Datasheet

Features and benefits

C VCES = 600V
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coeffic.

Image gallery

IRGSL4B60KD1PbF Page 1 IRGSL4B60KD1PbF Page 2 IRGSL4B60KD1PbF Page 3

TAGS

IRGSL4B60KD1PbF
Insulated
Gate
Bipolar
Transistor
International Rectifier

Manufacturer


International Rectifier

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