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IRGS6B60KDPBF Datasheet, International Rectifier

IRGS6B60KDPBF transistor equivalent, insulated gate bipolar transistor.

IRGS6B60KDPBF Avg. rating / M : 1.0 rating-13

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IRGS6B60KDPBF Datasheet

Features and benefits


* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery .

Application

C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC DUT 360V diode clamp / DUT - 5V Rg L DUT.

Image gallery

IRGS6B60KDPBF Page 1 IRGS6B60KDPBF Page 2 IRGS6B60KDPBF Page 3

TAGS

IRGS6B60KDPBF
Insulated
Gate
Bipolar
Transistor
IRGS6B60KD
IRGS6B60K
IRGS6B60KPBF
International Rectifier

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