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IRGS4607DPBF Datasheet, International Rectifier

IRGS4607DPBF transistor equivalent, insulated gate bipolar transistor.

IRGS4607DPBF Avg. rating / M : 1.0 rating-11

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IRGS4607DPBF Datasheet

Features and benefits

Low VCE(ON) and Switching Losses 5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient G Gate C Collector E E.

Application


* Industrial Motor Drive
* UPS
* Solar Inverters
* Welding Features Low VCE(ON) and Switching Losses 5µs.

Image gallery

IRGS4607DPBF Page 1 IRGS4607DPBF Page 2 IRGS4607DPBF Page 3

TAGS

IRGS4607DPBF
Insulated
Gate
Bipolar
Transistor
International Rectifier

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