IRGS4062DPBF - Power MOSFET

Product Overview

International Rectifier

Part number	IRGS4062DPBF
Manufacturer	International Rectifier
File Size	484.73 KB
Description	Power MOSFET
Datasheet	IRGS4062DPBF Datasheet
Additional preview pages of the IRGS4062DPBF datasheet.

Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGS4062DPbF IRGSL4062DPbF VCES = 600V IC = 24A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 1.

📁 Similar Datasheet

Other Datasheets by International Rectifier

Published: Apr 22, 2014 |