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IRGP4640PBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4640PBF datasheet PDF. This datasheet also covers the IRGP4640-EPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

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Note: The manufacturer provides a single datasheet file (IRGP4640-EPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRGP4640PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGP4640PBF. For precise diagrams, and layout, please refer to the original PDF.

IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V IC = 40A, TC = 100°C C C C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1....

View more extracted text
SC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.

📁 Similar Datasheet

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