IRGB4B60KPBF
IRGB4B60KPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
Features
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- - Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free.
IRGB4B60KPb F IRGS4B60KPb F IRGSL4B60KPb F
VCES = 600V IC = 6.8A, TC=100°C
G E tsc > 10µs, TJ=150°C
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. n-channel
VCE(on) typ. = 2.1V
TO-220 IRGB4B60KPb F
D2Pak TO-262 IRGS4B60KPb F IRGSL4B60KPb F
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 12 6.8
Units
V A c
24 24 ±20 63 31 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W
Gate-to-Emitter Voltage Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient Weight Junction-to-Ambient (PCB Mount, steady state)
Min.
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