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IRGB4B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number: IRGB4B60KPBF
Manufacturer: International Rectifier
File Size: 387.58 KB
Datasheet: IRGB4B60KPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGB4B60KPBF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current.

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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