IRGB440U - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Datasheet Details

Part number	IRGB440U
Manufacturer	International Rectifier
File Size	181.81 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB440U Datasheet
Additional preview pages of the IRGB440U datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 22A n-channel.

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Published: Mar 5, 2010 |