IRG7PH37K10DPBF
IRG7PH37K10DPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- Part of the IRG7PH37K10D-EPBF comparator family.
- Part of the IRG7PH37K10D-EPBF comparator family.
IRG7PH37K10DPb F IRG7PH37K10D-EPb F
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C t SC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A
G n-channel
Applications
- Industrial Motor Drive
- UPS G Gate
G IRG7PH37K10DPb F TO‐247AC C Collector
G IRG7PH37K10D‐EPb F TO‐247AD E Emitter
Features
Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF...
