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IRFZ48VSPBF - Power MOSFET

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL R E CT IF IE R LOGO AS S E MBL Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E CODE 8 www. irf. com Free Datasheet http://www. datasheet4u. com/ IRFZ48VSPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.

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Full PDF Text Transcription

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PD - 95573 IRFZ48VSPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S ID = 72A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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