IRFZ48VSPBF datasheet, mosfet equivalent, International Rectifier

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Features and benefits

arge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com Free Datasheet http://www.datasheet4u.com/ IRFZ48VSPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + .

Application

l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S ID = 72A Advanced HEXFET® Power MOSF.

Description

l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S ID = 72A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi.

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