IRFZ48VPBF mosfet equivalent, power mosfet.
FZ48VPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
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Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Cu.
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
G S
ID = 72A
Description
Advanced HEXFET® Power MOSFETs.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET.
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