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IRFZ46L - Power MOSFET

Download the IRFZ46L datasheet PDF. This datasheet also covers the IRFZ46S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ46S-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ46 HEXFET Power MOSFET ART CHIP
IRFZ46 Power MOSFET Vishay
IRFZ46N N-Channel MOSFET INCHANGE
IRFZ46NS N-Channel MOSFET INCHANGE
IRFZ46Z N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ46 Power MOSFET
IRFZ46N Power MOSFET
IRFZ46NL POWER MOSFET
IRFZ46NLPbF HEXFET Power MOSFET
IRFZ46NPbF Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package.