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IRFZ46L - Power MOSFET

This page provides the datasheet information for the IRFZ46L, a member of the IRFZ46S Power MOSFET family.

Datasheet Summary

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Full PDF Text Transcription

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l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package.
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