Datasheet4U Logo Datasheet4U.com

IRFZ24S - HEXFET Power MOSFET

Download the IRFZ24S datasheet PDF. This datasheet also covers the IRFZ24L variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ24L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ24S Power MOSFET Vishay
IRFZ24 Power MOSFET Fairchild Semiconductor
IRFZ24 Power MOSFET Vishay
IRFZ24A ADVANCED POWER MOSFET Fairchild Semiconductor
IRFZ24L Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ24 Power MOSFET
IRFZ24L HEXFET Power MOSFET
IRFZ24N Power MOSFET
IRFZ24NL Power MOSFET
IRFZ24NLPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.