IRFU5305PBF mosfet equivalent, power mosfet.
nche Energy Vs. Drain Current
50KΩ 12V .2µF .3µF
D.U.T.
+VDS
-3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power.
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