l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® .

S ID = 42A D-Pak I-Pak IRFR2607ZPbF IRFU2607ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Dra.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

IRFU2607Z

IRFU2605

IRFU210

IRFU210A

IRFU210B

IRFU210PBF

IRFU214

IRFU214A

IRFU214B

IRFU214BA3HD

IRFU214PBF

IRFU220

IRFU220A

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