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IRFS3307PbF - HEXFET Power MOSFET

Download the IRFS3307PbF datasheet PDF. This datasheet also covers the IRFB3307PbF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • ture (°C) Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFB3307PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFS3307 Power MOSFET IRF
IRFS3307ZTRL N-Channel MOSFET INCHANGE
IRFS3306 N-Channel MOSFET INCHANGE
IRFS33N15D Power MOSFET IRF
IRFS33N15D N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFS3307 HEXFET Power MOSFET
IRFS3307ZPBF HEXFET Power MOSFET
IRFS3306 Power MOSFET
IRFS3306PBF Power MOSFET
IRFS33N15DPbF Power MOSFET

Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 95706D IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. 75V 5.0m: :G max. 6.
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