Part IRFR4104PbF
Description Power MOSFET
Category MOSFET
Manufacturer International Rectifier
Size 321.48 KB
International Rectifier
IRFR4104PbF

Overview

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

  • VDSS = 40V RDS(on) = 5.5mΩ G S ID = 42A