IRFR3505PbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Descript.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive .
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