IRFR3411 - Power MOSFET

International Rectifier (now Infineon)

Description

achieve extremely low on-resistance per silicon area.

IRFR3411 power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFR3411
Manufacturer	International Rectifier (now Infineon)
File Size	115.80 KB
Description	Power MOSFET
Datasheet	IRFR3411 Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRFR3411PBF	HEXFET Power MOSFET
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IRFR3410PBF	HEXFET Power MOSFET
IRFR3412	SMPS MOSFET
IRFR3412PBF	SMPS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications.