IRFR2607Z datasheet, mosfet equivalent, International Rectifier

Features and benefits

O Advanced Process Technology O Ultra Low On-Resistance O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically.

Application

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon a.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.

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