Datasheet Details
| Part number | IRFP9140NPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 233.38 KB |
| Description | Power MOSFET |
| Download | IRFP9140NPBF Download (PDF) |
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| Part number | IRFP9140NPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 233.38 KB |
| Description | Power MOSFET |
| Download | IRFP9140NPBF Download (PDF) |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated l Lead-Free.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFP9140N | Power MOSFET | IRF |
 |
IRFP9140N | N-Channel MOSFET | INCHANGE |
 |
IRFP9140 | P-Channel Power MOSFET | INTERSIL |
 |
IRFP9140 | (IRF9140 - IRF9143) P-Channel Power MOSFETs | Samsung Electronics |
 |
IRFP9140 | Power MOSFET | Vishay |
| Part Number | Description |
|---|---|
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