IRFP2907PBF mosfet equivalent, power mosfet.
of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this.
l Telecom applications requiring soft start
Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic d.
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast sw.
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