IRFP27N60KPBF Datasheet | International Rectifier

SMPS MOSFET - 95479A IRFP27N60KPb F Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw HEXFET® Power MOSFET VDSS 600V RDS(on) typ. 180mΩ 27A TO-247AC Max. 27 18 110 500 4.0 ± 30 13 -55 to + 150 300 10 lbf- in (1.1N- m) Units A W W/°C V V/ns °C Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. - - - - - - - - - Max. 530 27 50 Units m J A m J Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ....