IRFL024ZPbF mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C
iContinuous Drain .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of thisdesign area150°Cjunctionoperatingtemperature, fast switching speed and improved repetitive avalanch.
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