IRFI9520N mosfet equivalent, power mosfet.
20N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
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+ Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance
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The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The m.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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