Datasheet4U Logo Datasheet4U.com

IRFI1010NPBF - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Full PDF Text Transcription for IRFI1010NPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFI1010NPBF. For precise diagrams, and layout, please refer to the original PDF.

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Descripti...

View more extracted text
Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IRFI1010N N-Channel MOSFET INCHANGE

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRFI1010N Power MOSFET
IRFI1010 Power MOSFET
IRFI1310G Power MOSFET
IRFI1310N Power MOSFET
IRFI1310NPBF Power MOSFET
IRFI064 N-Channel Power MOSFET
IRFI260 N-Channel Power MOSFET
IRFI3205 Power MOSFET
IRFI3205PBF Power MOSFET
IRFI3306GPBF Power MOSFET