IRFH7110PBF Datasheet | International Rectifier

Features and Benefits Features Low RDSon (< 13.5m W) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH7110TRPBF IRFH7110TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Benefits Lower Conduction Losses Enables better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Note Form Tape and Reel Tape and Reel Quantity 4000 400 EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. 100 ± 20 11 8.6 58 37 50 240 3.6 104 0.029 -55 to + 150 Units V g g c hi h i W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through ‡ are on page 9 1 .irf. © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014 IRFH7110Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge...