IRFB9N30APBF mosfet equivalent, power mosfet.
100
0 25 50 75 100 125 150
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
400
380
360
340 0
2468
I av , Avalanche Curre.
at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 con.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-i.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 124.85KB)