Datasheet4U Logo Datasheet4U.com

IRFB7430PBF - Power MOSFET

Features

  • ctive Transient Thermal Impedance, Junction-to-Case 1000 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) Avalanche Current (A) 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) Fig 15. Typical Avalanche Current vs. Pulsewidth 1.0E-02 1.0E-01 EAR , Avalanche Energy (mJ) 800 TOP Single Pulse Notes on Repetitive Avalanche Cur.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB7434 N-Channel MOSFET INCHANGE
IRFB7434PBF N-Channel 40V MOSFET VBsemi
IRFB7437 N-Channel MOSFET INCHANGE
IRFB7437GPBF N-Channel 40V MOSFET VBsemi
IRFB7440 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB7434PBF Power MOSFET
IRFB7437 Power MOSFET
IRFB7437PBF Power MOSFET
IRFB7440GPBF Power MOSFET
IRFB7440PbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies l Synchronous rectifier applications l Resonant mode power supplies l OR-ing and redundant power switches l DC/DC and AC/DC converters l DC/AC Inverters Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97782A StrongIRFET™ IRFB7430PbF HEXFET® Power MOSFET D VDSS 40V RDS(on) typ. 1.0m cG max. 1.