D.U.T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFB4215PbF Peak Diode Recovery dv/dt Test Circuit D.U.T* .

l Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 9.0mΩ G ID = 115Aˆ S Description Advanced HEXFET® Power MOSFET.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

IRFB4215

IRFB4212

IRFB4212PbF

IRFB4227

IRFB4227PBF

IRFB4228

IRFB4228PBF

IRFB4229

IRFB4229PBF

IRFB42N20D

IRFB42N20DPBF

IRFB4019

IRFB4019PBF

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