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International Rectifier Electronic Components Datasheet

IRFB3307ZPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97214D
IRFB3307ZPbF
IRFS3307ZPbF
IRFSL3307ZPbF
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
4.6mΩ
cmax.
5.8mΩ
G
ID (Silicon Limited)
128A
S ID (Package Limited)
120A
D DD
S
D
G
TO-220AB
IRFB3307ZPbF
S
G
D2Pak
IRFS3307ZPbF
S
D
G
TO-262
IRFSL3307ZPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
kJunction-to-Case
RθCS
RθJA
RθJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
™128
90™
120
512
230
1.5
± 20
6.7
-55 to + 175
300
x x10lbf in (1.1N m)
140
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
08/19/11


International Rectifier Electronic Components Datasheet

IRFB3307ZPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFB/S/SL3307ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
75 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.094 ––– V/°C Reference to 25°C, ID = 5mA
g––– 4.6 5.8 mΩ VGS = 10V, ID = 75A
2.0 ––– 4.0 V VDS = VGS, ID = 150μA
RG(int)
IDSS
IGSS
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– 0.70 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
Ω
μA VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
320
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
–––
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
iEffective Output Capacitance (Energy Related) –––
hEffective Output Capacitance (Time Related)
–––
–––
79
19
24
55
15
64
38
65
4750
420
190
440
410
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 50V, ID = 75A
nC ID = 75A
gVDS = 38V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
ns VDD = 49V
ID = 75A
gRG = 2.6Ω
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
jVGS = 0V, VDS = 0V to 60V
hVGS = 0V, VDS = 0V to 60V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãdi(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 128 A MOSFET symbol
D
––– ––– 512
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 75A, VGS = 0V
S
––– 33 50 ns TJ = 25°C
VR = 64V,
––– 39 59
TJ = 125°C
––– 42 63 nC TJ = 25°C
gIF = 75A
di/dt = 100A/μs
––– 56 84
TJ = 125°C
––– 2.2 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 75A, di/dt 1570A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.050mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2 www.irf.com


Part Number IRFB3307ZPBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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International Rectifier





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