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IRFB3307ZPBF - HEXFET Power MOSFET

Key Features

  • Duty Cycle 125 ID = 75A 100 75 50 25 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per.

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97214D IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 4.6mΩ cmax. 5.