Datasheet4U Logo Datasheet4U.com

IRFB3307PbF - HEXFET Power MOSFET

Features

  • ture (°C) Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFB3307 N-Channel MOSFET INCHANGE
IRFB3307Z N-Channel MOSFET INCHANGE
IRFB3306 N-Channel MOSFET INCHANGE
IRFB33N15D N-Channel MOSFET INCHANGE
IRFB3004 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFB3307 HEXFET Power MOSFET
IRFB3307ZPBF HEXFET Power MOSFET
IRFB3306GPbF Power MOSFET
IRFB3306PBF Power MOSFET
IRFB33N15D Power MOSFET

Full PDF Text Transcription

Click to expand full text
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 95706D IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. 75V 5.0m: :G max. 6.
Published: |