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International Rectifier Electronic Components Datasheet

IRFB3206GPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

PD - 96210
IRFB3206GPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.4m:
3.0m:
c210A
S ID (Package Limited) 120A
D
DS
G
TO-220AB
IRFB3206GPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220
D
Drain
S
Source
Max.
210™
150™
120
840
300
2.0
± 20
5.0
-55 to + 175
300
x x10lbf in (1.1N m)
170
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
1/06/09


International Rectifier Electronic Components Datasheet

IRFB3206GPbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFB3206GPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
60
–––
–––
2.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
210
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
2.4
–––
–––
–––
–––
–––
0.7
Typ.
–––
120
29
35
85
19
82
55
83
6540
720
360
1040
1230
Max. Units
Conditions
–––
–––
3.0
4.0
20
250
100
-100
–––
V VGS = 0V, ID = 250µA
dV/°C Reference to 25°C, ID = 5mA
gmVGS = 10V, ID = 75A
V VDS = VGS, ID = 150µA
µA VDS =60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Max. Units
Conditions
––– S VDS = 50V, ID = 75A
170 nC ID = 75A
––– VDS =30V
gVGS = 10V
––– ID = 75A, VDS =0V, VGS = 10V
––– ns VDD = 30V
––– ID = 75A
––– RG =2.7
g––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz, See Fig.5
i––– VGS = 0V, VDS = 0V to 48V , See Fig.11
––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 210 A MOSFET symbol
––– ––– 840
showing the
A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 75A, VGS = 0V
––– 33 50 ns TJ = 25°C
VR = 51V,
––– 37 56
TJ = 125°C
––– 41 62 nC TJ = 25°C
gIF = 75A
di/dt = 100A/µs
––– 53 80
TJ = 125°C
––– 2.1 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 75A, di/dt 360A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 120A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.023mH
RG = 25, IAS = 120A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C
above this value.
2 www.irf.com


Part Number IRFB3206GPbF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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