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International Rectifier Electronic Components Datasheet

IRF9204PBF Datasheet

Power MOSFET

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Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
PD - 96277B
IRF9204PbF
G
G
G a te
HEXFET® Power MOSFET
D
VDSS = -40V
RDS(on) = 16mΩ
ID = -74A
S
D
S
D
G
TO-220AB
IRF9204PbF
D
D ra in
S
S o u rce
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Max.
-74
-53
-56
-300
143
0.95
± 20
270
502
See Fig.17a, 17b, 14, 15
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
jJunction-to-Case
iCase-to-Sink, Flat, Greased Surface
iJunction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
www.irf.com
1
05/23/11
Free Datasheet http://www.datasheet4u.com/


International Rectifier Electronic Components Datasheet

IRF9204PBF Datasheet

Power MOSFET

No Preview Available !

IRF9204PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
-40 ––– ––– V VGS = 0V, ID = -250μA
––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA
e––– –––
e––– –––
16
23
mΩ
VGS = -10V, ID = -37A
VGS = -4.5V, ID = -30A
-1.0 -2.0 -3.0 V VDS = VGS, ID = -100μA
29 ––– ––– S VDS = -10V, ID = -37A
–––
–––
––– -25
––– -250
μA
VDS = -40V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 125°C
–––
–––
––– -100
––– 100
nA
VGS = -20V
VGS = 20V
––– 149 224
ID = -37A
e––– 27 ––– nC VDS = -32V
––– 31 –––
VGS = -10V
––– 27 –––
VDD = -20V
––– 383 –––
––– 139 –––
––– 153 –––
ens
ID = -37A
RG = 7.5 Ω
VGS = -10V
––– 4.5 –––
Between lead,
–––
7.5
–––
nH
6mm (0.25in.)
from package
G
and center of die contact
D
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 7676 –––
––– 654 –––
––– 539 –––
––– 1747 –––
––– 598 –––
––– 797 –––
VGS = 0V
VDS = -25V
pF
ƒ = 1.0KHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
fVGS = 0V, VDS = -32V, ƒ = 1.0KHz
VGS = 0V, VDS = 0V to -32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
––– ––– -74
MOSFET symbol
A showing the
D
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– -300
––– ––– -1.3
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = -37A, VGS = 0V
––– 51 77
––– 377 566
ens TJ = 25°C, IF = -37A, VDD = -20V
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.399mH
RG = 25Ω, IAS = -37A, VGS =-10V. Part not recommended for
use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS .
2
… Limited by TJmax , see Fig.17a, 17b, 14, 15 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ This is only applied to TO-220AB pakcage.
ˆ Rθ is measured at TJ approximately 90°C
www.irf.com
Free Datasheet http://www.datasheet4u.com/


Part Number IRF9204PBF
Description Power MOSFET
Maker International Rectifier
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IRF9204PBF Datasheet PDF






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