IRF8852PBF datasheet, mosfet equivalent, International Rectifier

Features and benefits

s(th) Qgodr Qgd Qgs2 Qgs1 Fig 17. Gate Charge Waveform Fig 17. Gate Charge Test Circuit V DS V GS RG RD VDS 90% D.U.T. + - V DD VGS Pulse Width ≤ 1 µs Duty Fac.

Application

where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin .

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known fo.

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