IRF8327SPBF mosfet equivalent, power mosfet.
ain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 100 10
VDS = 15V ≤60μs PULSE WIDTH
TJ = 150°C TJ = 25°C TJ = -40°C
1
ID, Drain-to-Source Current .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® pac.
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