VDS RDS(on) Qg Qsw Qoss IRF7805PbF 30V 11mΩ 31nC 11.5nC 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C.

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power t.

IRF7805PBF

IRF7805PBF-1

IRF7805

IRF7805A

IRF7805TRPbF-1

IRF7805ZPbF

IRF7805ZPBF-1

IRF7807

IRF7807A

IRF7807APbF

IRF7807APbF-1

IRF7807ATRPbF-1

IRF7807D1

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