IRF7757PbF mosfet equivalent, power mosfet.
S 2 4 DATUM PLANE H IS LOCATED AS S HOWN.
G1 4
5 G2 5 DATUM A AND B TO BE DET ERMINED AT DATUM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DATUM PLANE H.
7 DIME.
where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin .
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known fo.
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