Datasheet Summary
- 96146A
IRF7701GPbF l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
-12V
RDS(on) max
0.011@VGS = -4.5V 0.015@VGS = -2.5V 0.022@VGS = -1.8V
-10A -8.5A -7.0A
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner
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