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IRF7606PBF - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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PD - 95245 IRF7606PbF l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description S S S G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET 1 8 A D 2 7D 3 6D 4 5D Top View VDSS = -30V RDS(on) = 0.
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